Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor

被引：12

作者：

Saraf, L. V. ^{[1
]}

Engelhard, M. H. ^{[1
]}

Wang, C. M. ^{[1
]}

Lea, A. S. ^{[1
]}

McCready, D. E. ^{[1
]}

Shutthanandan, V. ^{[1
]}

Baer, D. R. ^{[1
]}

Chambers, S. A. ^{[1
]}

机构：

[1] Pacific NW Natl Lab, Richland, WA 99352 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2007年 / 22卷 / 05期

关键词：

D O I：

10.1557/jmr.2007.0146

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc [Zn(TMHD)(2)] is a relatively uninvestigated precursor that was used in this work to grow highly c-axis-oriented ZnO films on Si(100). X-ray photoelectron spectroscopy studies before and after Ar ion sputtering indicated that surface carbon on several samples was reduced from as much as 34 at.% to much less than 1 at.% within the first 5 nm, indicating very clean Zn(TMHD)2 precursor decomposition. Microstructural and compositional analysis revealed columnar ZnO grains with domain widths of approximately half the total film thickness and a Zn-to-O atomic percent ratio indicative of stoichometric ZnO.

引用

页码：1230 / 1234

页数：5

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