Semi-Classical Modelling of the Electron Transport in Carbon Nanotubes and Graphene Nanoribbons for THz Range Applications

被引：0
|
作者：
Maffucci, Antonio [1 ]
机构：
[1] Univ Cassino & Southern Lazio, Dept Elect & Informat Engn, Cassino, Italy
来源：
2015 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI | 2015年
关键词：
Carbon nanotubes; Graphene Nanoribbons; Nanointerconnects; Terahertz interconnects; Tunneling effect; INTERCONNECTS; PERFORMANCE;
D O I：
10.1109/ISVLSI.2015.51
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper deals with the possible use of carbon-based nano-interconnects for terahertz applications. The electrodynamics of nano-interconnects, either made of carbon nanotubes or graphene nanoribbons, may be conveniently described by means of a semi-classical transport model, based on the modified Boltzmann transport equation. In this paper, this model is revised in order to include the effects of tunneling between adjacent carbon nanotubes or graphene layers. The final transmission line model is modified taking into account new terms for the line matrix parameters, directly related to the tunneling. Such terms introduce resonances and dispersion which potentially reduce the applicability of such interconnects. The effects of tunneling in the terahertz range is investigated, with reference to two examples of carbon nano-interconnects.
引用
收藏
页码：450 / 455
页数：6
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