Low temperature InP/Si wafer bonding using boride treated surface

被引：7

作者：

Huang, Hui ^{[1
]}

Ren, Xiaomin ^{[1
]}

Wang, Wenjuan ^{[1
]}

Song, Hailan ^{[1
]}

Wang, Qi ^{[1
]}

Cai, Shiwei ^{[1
]}

Huang, Yongqing ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, Sch Telecommun Engn, Minist Educ, Key Lab Opt Commun & Lightwave Technol, Beijing 100876, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 16期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2724922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An approach for InP/Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the InP fracture energy by annealing at 280 degrees C. An In0.53Ga0.47As/InP multiple-quantum-well (MQW) structure grown on InP was transferred onto Si substrate via the bonding process. X-ray diffraction and photoluminescence reveal that crystal quality of the bonded MQW was preserved. A thin B2O3-POx-SiO2 oxide layer of about 28 nm thick at the bonding interface was detected. X-ray photoelectron spectroscopy and Raman analyses indicate that the formation of oxygen bridging bonds by boride treatment is responsible for the strong fusion obtained at such low temperature. (c) 2007 American Institute of Physics.

引用

页数：3

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