Epitaxial electrodeposition of high-aspect-ratio CU2O(110) nanostructures on InP(111)

被引：1
|
作者：
Liu, R
Kulp, EA
Oba, F
Bohannan, EW
Ernst, F
Switzer, JA [1 ]
机构：
[1] Univ Missouri, Dept Chem, Rolla, MO 65409 USA
[2] Univ Missouri, Grad Ctr Mat Res, Rolla, MO 65409 USA
[3] Case Western Reserve Univ, Dept Mat Sci & Engn, Cleveland, OH 44106 USA
来源：
CHEMISTRY OF MATERIALS | 2005年 / 17卷 / 04期
关键词：
D O I：
10.1021/cm048296l
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Epitaxial cuprous oxide nanostructures with high aspect ratio were deposited electrochemically oil n-InP(111) from aqueous solution at room temperature. High-resolution X-ray diffraction shows that the Cu2O and InP form three equivalent epitaxial orientation relationships that are rotated 120degrees relative to each other: Cu2O(110)[100]parallel to InP(111)[110], Cu2O(110)[100]parallel to InP(111)[101], and Cu2O(110)[100]parallel to InP(111)[011]. The size and aspect ratio of the CLhO nanostructures depend on the applied deposition current density. At a deposition current density of 0.125 mA/cm(2), uniformly sized nanostructures 30 nm wide and 1000 nm long were obtained. Transmission electron microscopy reveals all amorphous, oxygen-rich interlayer and a crystalline Cu3P layer between the Cu2O and InP.
引用
收藏
页码：725 / 729
页数：5
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