Resonant photoemission study of rare earth 4f states in Sn1-xGdxTe

被引：7

作者：

Kowalski, BJ

Ghijsen, J

Golacki, Z

Guziewicz, E

Story, T

Arciszewska, M

Orlowski, BA

Johnson, RL

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Fac Univ Notre Dame Paix, LISE, B-5000 Namur, Belgium

[3] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1998年 / 88卷

关键词：

semimagnetic semiconductors; photoemission spectra; rare earth elements;

D O I：

10.1016/S0368-2048(97)00150-3

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Resonant photoemission spectroscopy was applied to study the contribution of Gd 4f states to the electronic structure of Sn1-xGdxTe. The energy distribution curves (EDC) were analyzed and the binding energy of Gd 4f shell was determined. The correspondence between the charge state of Gd ions and the binding energy of Gd 4f electrons was discussed. (C) 1998 Elsevier Science B.V.

引用

页码：327 / 331

页数：5

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