Progress in deep-UV photoresists

被引：19
|
作者：
Sahoo, PB [1 ]
Vyas, R [1 ]
Wadhwa, M [1 ]
Verma, S [1 ]
机构：
[1] Semicond Complex Ltd, Mohali 160059, India
来源：
BULLETIN OF MATERIALS SCIENCE | 2002年 / 25卷 / 06期
关键词：
photoresists; DUV lithography; chemically amplified (CA) resist; top surface imaging;
D O I：
10.1007/BF02710549
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Higher resolution can be achieved in lithography by decreasing the wavelength of the exposure source. However, resist material and their processing are also important when we move to a shorter wavelength lithography technology. This paper reviews the recent development and challenges of deep-UV photoresists and their processing technology.
引用
收藏
页码：553 / 556
页数：4
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