Order-N electronic structure calculation of n-type GaAs quantum dots

被引：0
|
作者：
Nomura, S. [1 ,2 ]
Iitaka, T. [2 ]
机构：
[1] JST, CREST, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058571, Japan
[2] RIKEN, Wako, Saitama 3510198, Japan
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
quantum dot; local density approximation; order-N;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a novel method for calculating electronic properties of large and complex systems based on a local density approximation by using a combination of Chebyshev polynomial expansion and time-dependent method. The electron density is obtained without calculating eigenenergies and eigenstates with the computational time which scales as O(N). This method is applied to calculate the electronic structure of a model n-type GaAs quantum dots.
引用
收藏
页码：885 / +
页数：2
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