Novel GaAs-based FETs for high-voltage high-power applications

Operation principle and power performance of novel high-voltage GaAs-based FETs developed for mobile communication base station applications are described. The fabricated AlGaAs/GaAs heterostructure FET with a field-modulating plate, which is located on the SiO2 insulating film at the recessed region between the gate and drain and is short-circuited to the gate electrode, demonstrated state-of-the-art high-voltage high-power operation of up to 35V. A maximum output-power of 50W, corresponding to a power density of 1.2W/mm, and a power-added efficiency of 52% were achieved at 1.5GHz, with a drain bias voltage of 26V from a single FET chip with a total gate width of 42mm.