Low efficiency roll-off thermally activated delayed fluorescence emitters for non-doped OLEDs: Substitution effect of thioether and sulfone groups

被引:12
|
作者
Ma, Mengyao [1 ]
Li, Jiuyan [1 ]
Liu, Di [1 ,2 ]
Li, Deli [1 ]
Dong, Ruizhi [1 ]
Mei, Yongqiang [1 ]
机构
[1] Dalian Univ Technol, Coll Chem Engn, State Key Lab Fine Chem, 2 Linggong Rd, Dalian 116024, Peoples R China
[2] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China
基金
中国国家自然科学基金;
关键词
Non-doped OLEDs; Barrier group; Thioether; Sulfone; Thermally activated delayed fluorescence (TADF); LIGHT-EMITTING-DIODES; AGGREGATION-INDUCED EMISSION; HOST MATERIALS; PHOSPHORESCENT; DESIGN;
D O I
10.1016/j.dyepig.2021.109649
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
The non-doped organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) materials are attracting increasing attentions due to the excellent performance and simple fabrication. We report an effective design strategy of TADF emitters to improve the non-doped performance by adjusting the valence state of the S atom in TADF molecules and utilizing the steric hindrance effect. Two novel TADF materials PT-BZDMAC and PS-BZ-DMAC were designed and synthesized with benzophenone acceptor and acridine donor. In particular, the thioether or sulfone group was attached to benzophenone. Remarkably, the bluish-green TADFOLED with non-doped PT-BZ-DMAC turned on at 2.5 V and realized a maximum external quantum efficiency (EQE) of 17.34%, which was comparable with its doped OLED (17.71%) but showed much slower roll-off. At 100 and 1000 cd m- 2, the non-doped PT-BZ-DMAC device still maintained acceptable efficiencies at 14.65% and 12.59%. In contrast, sulfone-modified PS-BZ-DMAC exhibited good efficiency of 20.55% only in doped OLED. The single crystal analysis and DFT calculation revealed that the phenyl thioether unit in PT-BZ-DMAC hardly contributes to the LUMO or the electronic transitions, instead determines the highly twisted geometry and acts as the barrier group, finally improving the performance of PT-BZ-DMAC in neat film device.
引用
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页数:10
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