Meyer-Neldel rule in amorphous strontium titanate thin films

被引:19
|
作者
Morii, K [1 ]
Matsui, T [1 ]
Tsuda, H [1 ]
Mabuchi, H [1 ]
机构
[1] Osaka Prefecture Univ, Grad Sch Engn, Dept Met & Sci Mat, Sakai, Osaka 5998531, Japan
关键词
D O I
10.1063/1.1317543
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, we report the experimental result indicating that the electrical conductivity in thin films of amorphous strontium titanate (a-STO) is well fit to the Meyer-Neldel (MN) rule over the temperature range 300-470 K. The films were ion-beam sputtered and annealed in two different atmospheres: a vacuum and flowing oxygen. The MN plots for the films show two parallel straight lines depending on the annealing atmosphere, which give the identical MN parameters of about 35 meV with the conductivity prefactors of 9.3x10(-10) and 2.3x10(-14)(Omega cm)(-1) for the vacuum- and oxygen- annealed films, respectively. (C) 2000 American Institute of Physics. [S0003-6951(00)03941-3].
引用
收藏
页码:2361 / 2363
页数:3
相关论文
共 50 条
  • [41] Meyer-Neldel rule in Se and S-doped hydrogenated amorphous silicon
    Sharma, S. K.
    Sagar, P.
    Gupta, Himanshu
    Kumar, Rajendra
    Mehra, R. M.
    SOLID-STATE ELECTRONICS, 2007, 51 (08) : 1124 - 1128
  • [42] The Meyer-Neldel rule in the conductivity of insulating germanium nitride and oxynitride films
    Pinto, N.
    Caproli, F.
    Maggioni, G.
    Carturan, S.
    Napoli, D. R.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2016, 452 : 280 - 285
  • [43] Comparative study of the Meyer-Neldel rule in porous silicon and hydrogenated amorphous silicon
    Lubianiker, Y.
    Balberg, I.
    Journal of Non-Crystalline Solids, 227-230 (Pt A): : 180 - 184
  • [44] THERMALLY INDUCED METASTABILITY AND THE MEYER-NELDEL RULE IN HYDROGENATED AMORPHOUS-SILICON
    KIRBS, V
    DRUESEDAU, T
    FIEDLER, H
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (36) : 7473 - 7478
  • [45] Investigation of the Meyer-Neldel Rule in Si MOSFETs
    Franchini, Giulio
    Malavena, Gerardo
    Compagnoni, Christian Monzio
    Spinelli, Alessandro S.
    IEEE ELECTRON DEVICE LETTERS, 2020, 41 (12) : 1821 - 1824
  • [46] A PHENOMENOLOGICAL MODEL FOR THE MEYER-NELDEL RULE - ERRATUM
    DYRE, JC
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (12): : 2431 - 2434
  • [47] The Meyer-Neldel rule in conductivity of nanocrystalline silicon
    Ram, SK
    Kumar, S
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 383 - 386
  • [48] Trap states as an explanation for the Meyer-Neldel rule in semiconductors
    Stallinga, P
    Gomes, HL
    ORGANIC ELECTRONICS, 2005, 6 (03) : 137 - 141
  • [49] High Field Conduction in Chemically Deposited ZnSe Nanocrystalline Thin Films: Observation of Meyer-Neldel Rule
    Mehta, Charita
    Abbas, Jasim M.
    Saini, G. S. S.
    Tripathi, S. K.
    INTERNATIONAL CONFERENCE ON ADVANCES IN CONDENSED AND NANO MATERIALS (ICACNM-2011), 2011, 1393
  • [50] Meyer-Neldel rule and further Meyer-Neldel rule in chalcogenide glasses from point of view of barrier-cluster model
    Banik, I.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2010, 12 (11): : 2247 - 2254