Field emission properties of indium-doped ZnO tetrapods

被引：20

作者：

Jung, M. N.

Ha, S. H. ^{[2
]}

Oh, S. J.

Koo, J. E.

Cho, Y. R. ^{[2
]}

Lee, H. C. ^{[1
]}

Lee, S. T. ^{[1
]}

Jeon, T. -I. ^{[3
]}

Makino, H. ^{[4
]}

Chang, J. H. ^{[1
]}

机构：

[1] Korea Maritime Univ, Div Mechatron Engn, Pusan 606791, South Korea

[2] Pusan Natl Univ, Pusan 609735, South Korea

[3] Korea Maritime Univ, Div Elect & Elect Engn, Pusan 606791, South Korea

[4] Kochi Univ Technol, Mat Design Ctr, Res Inst, Kochi 7828502, Japan

来源：

CURRENT APPLIED PHYSICS | 2009年 / 9卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

ZnO; Nanostructure; Tetrapods; Doping; Field emission; ELECTRON-EMISSION; ROOM-TEMPERATURE; NANOSTRUCTURES; EVAPORATION; NANOWIRES; NANORODS;

D O I：

10.1016/j.cap.2008.12.052

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium-doped ZnO (ZnO:In) tetrapods (TPs) with considerably high In content (In < 15 at.%) have been successfully synthesized by a mixed-source vapor phase transportation method (VPT). Powder X-ray diffraction (XRD) measurement of ZnO:In TPs revealed a single hexagonal phase, that indicates high structural quality of ZnO:In TPs. From room-temperature photoluminescence (PL) spectra, the Burstein-Moss (BM) shift was observed, which shows an increase of extrinsic carrier concentration. Also, we could observe field emission from ZnO:In TPs (8 at.%) with a threshold voltage (Eth) of 5.36 V/mu m at a current density of 0.1 mu A/cm(2). These results show the feasibility of impurity doping for tailoring the physical properties of ZnO-based nanostructures. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：E169 / E172

页数：4

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