Field emission properties of indium-doped ZnO tetrapods

被引：20
|
作者：
Jung, M. N.
Ha, S. H. [2 ]
Oh, S. J.
Koo, J. E.
Cho, Y. R. [2 ]
Lee, H. C. [1 ]
Lee, S. T. [1 ]
Jeon, T. -I. [3 ]
Makino, H. [4 ]
Chang, J. H. [1 ]
机构：
[1] Korea Maritime Univ, Div Mechatron Engn, Pusan 606791, South Korea
[2] Pusan Natl Univ, Pusan 609735, South Korea
[3] Korea Maritime Univ, Div Elect & Elect Engn, Pusan 606791, South Korea
[4] Kochi Univ Technol, Mat Design Ctr, Res Inst, Kochi 7828502, Japan
来源：
CURRENT APPLIED PHYSICS | 2009年 / 9卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
ZnO; Nanostructure; Tetrapods; Doping; Field emission; ELECTRON-EMISSION; ROOM-TEMPERATURE; NANOSTRUCTURES; EVAPORATION; NANOWIRES; NANORODS;
D O I：
10.1016/j.cap.2008.12.052
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium-doped ZnO (ZnO:In) tetrapods (TPs) with considerably high In content (In < 15 at.%) have been successfully synthesized by a mixed-source vapor phase transportation method (VPT). Powder X-ray diffraction (XRD) measurement of ZnO:In TPs revealed a single hexagonal phase, that indicates high structural quality of ZnO:In TPs. From room-temperature photoluminescence (PL) spectra, the Burstein-Moss (BM) shift was observed, which shows an increase of extrinsic carrier concentration. Also, we could observe field emission from ZnO:In TPs (8 at.%) with a threshold voltage (Eth) of 5.36 V/mu m at a current density of 0.1 mu A/cm(2). These results show the feasibility of impurity doping for tailoring the physical properties of ZnO-based nanostructures. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：E169 / E172
页数：4
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