Formation of Si1+ in the early stages of the oxidation of the Si[001] 2x1 surface

被引：9
|
作者：
Herrera-Gomez, Alberto [1 ]
Aguirre-Tostado, Francisco-Servando [2 ]
Pianetta, Piero [3 ]
机构：
[1] CINVESTAV, Unidad Queretaro, Queretaro 76230, Mexico
[2] Ctr Invest Mat Avanzados, Monterrey 66600, Nuevo Leon, Mexico
[3] SLAC Natl Accelerator Ctr, Menlo Pk, CA 94025 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2016年 / 34卷 / 02期
关键词：
CORE-LEVEL SPECTROSCOPY; INITIAL OXIDATION; SI(001)-2 X-1; PHOTOELECTRON-SPECTROSCOPY; CHARGE-TRANSFER; PHOTOEMISSION; INTERFACE; SPECTRA; ENERGY; LAYER;
D O I：
10.1116/1.4936336
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The early stages of the oxidation of the Si[001] 2 x 1 surface were studied with synchrotron radiation photoelectron spectroscopy. The analysis was based on the block approach, which is a refinement of spectra-subtraction that accounts for changes on the background signal and for band-bending shifts. By this method, it was possible to robustly show that the formation of Si1+ is due to oxygen bonding to the upper dimer atoms. Our results contrast with ab initio calculation, which indicates that the most favorable bonding site is the back-bond of the down-dimer. (C) 2015 American Vacuum Society.
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页数：4
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