AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance

被引：10
|
作者：
Zhou, Chunhua [1 ]
Chen, Wanjun [1 ,2 ]
Piner, Edwin L. [3 ]
Chen, Kevin J. [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[3] Nitronex Corp, Durham, NC 27703 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 01期
关键词：
AlGaN/GaN lateral field-effect rectifier; dual-channel; on-resistance; punchthrough breakdown immunity; REVERSE RECOVERY CHARACTERISTICS; GAN SCHOTTKY RECTIFIERS; P-I-N; VOLTAGE; BARRIER; PERFORMANCE; HEMTS;
D O I：
10.1109/LED.2009.2034761
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose an AlGaN/GaN dual-channel lateral field-effect rectifier (DCL-FER) with improved balance between the reverse breakdown voltage (BV) and on-resistance. Instead of utilizing a long single enhancement-mode (E-mode) Schottky-controlled channel to enhance the punchthrough BV but inevitably sacrifice the on-resistance, the DCL-FER features a dual channel consisting of one E-mode section and one depletion-mode (D-mode) section in series. The D-mode channel provides higher carrier density that facilitates high on-current or low on-resistance while still preventing the E-mode channel from being punched through under high reverse voltage. For rectifiers with the same physical dimensions (a drift region length of 5 mu m and a Schottky-controlled channel length of 2 mu m), the DCL-FER is shown to deliver comparable BV while featuring 53% lower on-resistance.
引用
收藏
页码：5 / 7
页数：3
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