Quantitative Analysis of Hump Effects of Gate-All-Around Metal-Oxide-Semiconductor Field-Effect Transistors

被引：2

作者：

Lee, Woojun ^{[1
]}

Choi, Woo Young ^{[1
]}

机构：

[1] Sogang Univ, Dept Elect Engn, Seoul 121742, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

EXTRACTION;

D O I：

10.1143/JJAP.49.04DC11

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hump effect of gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs) has been analyzed quantitatively. The function H(V-G) is introduced to evaluate the hump magnitude of GAA MOSFETs by extracting threshold voltages of main and parasitic channels accurately. Based on simulation study, the effect of fin doping concentration, fin corner rounding and gate oxide thickness on the hump magnitude of GAA MOSFETs has been analyzed quantitatively, which presents the design guideline of GAA MOSFETs. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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