High-efficiency dual-junction GaInP/GaAs tandem solar cells obtained by the method of MOCVD

被引：20
|
作者：
Lantratov, V. M. [1 ]
Kalyuzhnyi, N. A. [1 ]
Mintairov, S. A. [1 ]
Timoshina, N. Kh. [1 ]
Shvarts, M. Z. [1 ]
Andreev, V. M. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2007年 / 41卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
84.60.Jt; 81.15.Gh;
D O I：
10.1134/S106378260706022X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Monolithic dual-junction GaInP/GaAs solar cells grown by the MOCVD method were studied. The conditions of the growth of ternary GaxIn1-x P and AlxIn1-x P alloys lattice-matched to GaAs are optimized. Technology for fabrication of a tunneling diode with a high peak current density of 207 A/cm(2) on the basis of heavily doped n(++)-GaAs:Si and p(++)-AlGaAs:C layers is developed. Cascade GaInP/GaAs solar cells obtained as a result of relevant studies featuring a good efficiency of the solar-energy conversion both for space and terrestrial applications. The maximum value of the GaInP/GaAs solar-cell efficiency was 30.03% (at AM1.5D, 40 suns).
引用
收藏
页码：727 / 731
页数：5
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