Breakdown effects on the performance and reliability of power MESFETs

被引：1
|
作者：
Shirokov, MS
Leoni, RE
Wei, CJ
Hwang, JCM
机构：
来源：
GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996 | 1996年
关键词：
D O I：
10.1109/GAAS.1996.567631
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RF breakdown effects were characterized by waveform measurements and incorporated in a large-signal MESFET model Comparing to conventional models that are based on dc breakdown characteristics, the present model was found to predict more accurately the optimum bias, match, and drive conditions of the transistor, as well as its output power, efficiency, linearity, and reliability.
引用
收藏
页码：34 / 37
页数：2
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