Piezoresistivity (with uniaxial strain) in nanocrystalline films of rare-earth manganites

被引:1
|
作者
Sarkar, Jayanta [1 ]
Raychaudhuri, A. K. [1 ,2 ]
机构
[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
[2] Unit Nanosci & Technol, S N Bose Ctr Basic Sci, Kolkata 700089, India
来源
2006 IEEE CONFERENCE ON EMERGING TECHNOLOGIES - NANOELECTRONICS | 2006年
关键词
D O I
10.1109/NANOEL.2006.1609751
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a study of the piezoresistivity in nanostructured. polycrystalline films of La0.67Ca0.33MnO3 and La0.67Sr0.33MnO3 grown on oxidized Si (100) substrates. We have observed that the hole doped rare-earth manganites, which are well known for being colossal magnetoresistive (CMR) show change in its resistance under uniaxial strain even at room temperature. The piezoresistance was measured at room temperature by bending the Si cantilevers (on which the film is grown) in flexural mode both with compressive and tensile strain. The resistance of the film increases with tensile strain and decreases with compressive strain. A large gauge factor of 15-20 is seen in these films at room temperature.
引用
收藏
页码:372 / +
页数:2
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