Hot-carrier reliability in submicrometer LDMOS transistors

被引：41

作者：

Versari, R ^{[1
]}

Pieracci, A ^{[1
]}

Manzini, S ^{[1
]}

Contiero, C ^{[1
]}

Ricco, B ^{[1
]}

机构：

[1] Univ Bologna, Dipartimento Elettron Informat & Sistemist, I-40136 Bologna, Italy

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650402

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper provides a physical basis for the experimentally determined hot-electron-limited safe operating area of submicrometer LDMOS transistors under static bias conditions. The physical interpretation of the device behavior is based on the analysis of the bias-dependent Gate and Substrate currents and of the relative induced degradation.

引用

页码：371 / 374

页数：4

共 50 条

[31] HOT-CARRIER RELIABILITY OF TRENCH TRANSISTOR
AUR, S
YANG, P
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) : 2374 - 2374
[32] CHARACTERIZATION AND PHYSICAL-PROPERTIES OF DEFECTS INDUCED IN SUBMICROMETER MOS-TRANSISTORS BY HOT-CARRIER INJECTIONS
VUILLAUME, D
JOURNAL DE PHYSIQUE III, 1992, 2 (05): : 777 - 804
[33] HOT-CARRIER DRIFTS IN SUBMICROMETER P-CHANNEL MOSFETS
WEBER, W
LAU, F
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) : 208 - 210
[34] A comprehensive model for hot carrier degradation in LDMOS transistors
Moens, P.
Mertens, J.
Bauwens, F.
Joris, P.
De Ceuninck, W.
Tack, M.
2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, : 492 - +
[35] Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors
Wong, H.
Fu, Y.
Liou, J. J.
Yue, Y.
MICROELECTRONICS RELIABILITY, 2009, 49 (01) : 13 - 16
[36] HOT-CARRIER RELIABILITY OF TRENCH TRANSISTOR.
Aur, Shian
Yang, Ping
IEEE Transactions on Electron Devices, 1987, ED-34 (11)
[37] Design for Hot-Carrier Reliability of HV UMOS
Aryadeep, Chirag
Sheu, Gene
Selvendran, Sivaji
Jaiswal, Suman
Sai, S. Krishna
Mastanbasheer, Shaik
Dheeraj, Muntha Sai
Chen, Po-An
2017 6TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE), 2017,
[38] Hot-Carrier Reliability of Power SOI EDNMOS
Liao, Jie
Tan, Cher Ming
Spierings, Geert
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2010, 25 (07) : 1685 - 1691
[39] Key issues in evaluating hot-carrier reliability
Chung, JE
MICROELECTRONIC DEVICE AND MULTILEVEL INTERCONNECTION TECHNOLOGY II, 1996, 2875 : 64 - 74
[40] Technology mapping for hot-carrier reliability enhancement
Chen, Z
Koren, I
MICROELECTRONIC MANUFACTURING YIELD, RELIABILITY, AND FAILURE ANALYSIS III, 1997, 3216 : 42 - 50

← 1 2 3 4 5 →