STM investigation of nano-structures fabricated on passivated Si surfaces

被引:1
|
作者
Ha, JS [1 ]
Park, KH
Park, KW
Yun, WS
机构
[1] Korea Univ, Dept Chem & Biol Engn, Seoul 136701, South Korea
[2] ETRI, Semicond Basic Res Labs, Taejon 305600, South Korea
[3] KRISS, Elect Devices Grp, Taejon 305600, South Korea
关键词
nano-fabrication; passivated Si surfaces; scanning tunneling microscope; atomic force microscope; Ag nanodot; Si nano-dot; carbon nanotube; Au nano-wire;
D O I
10.1007/BF02697204
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have successfully fabricated nano-structures on passivated Si surfaces and investigated those structures by using scanning tunneling microscope (STM) and atomic force microscope (AFM). Ag nano-dots were formed on Sb-passivated Si(100) surface via self-organization mechanism and the single-electron charging effect was observed by STM at room temperature. Thermal nitridation and subsequent oxygen-induced etching of Si surfaces resulted in the formation of silicon nano-dots using silicon nitride islands as masks. Au/Ti nano-wire was also fabricated via a selective ion etching of Au/Ti thin film using carbon nanotube (CNT) mask. These results suggest new fabrication method of nano-structures using surface chemical reactions without artificial lithography techniques.
引用
收藏
页码:169 / 173
页数:5
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