Kinetics of In growth on Si(100)2x1 surface at low coverage - STM study

被引：8
|
作者：
Ostadal, Ivan [1 ]
Javorsky, Jakub [1 ]
Kocan, Pavel [1 ]
Sobotik, Pavel [1 ]
Setvin, Martin [1 ]
机构：
[1] Charles Univ Prague, Fac Math & Phys, Dept Surface & Plasma Sci, Prague 18200 8, Czech Republic
来源：
PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY | 2008年 / 100卷
关键词：
D O I：
10.1088/1742-6596/100/7/072006
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Scanning tunneling microscopy (STM) was used for studying nucleation and growth of 1-dimensional indium islands (chains) at coverage below 0.5 ML on the reconstructed Si(100)2x1 surface at room temperature (RT). In-vivo measurements-direct observations of growth during deposition-provided data on growth kinetics and showed a substantial role of C-defects at adsorption of metal atoms. Density of the metal chains and distribution of the chain lengths were obtained for various amounts of deposited indium. The length of the indium chains was specified with atomic accuracy. The real time observations showed that surface mobility of indium atoms at RT is probably not entirely restricted by the " forbidden zones" accepted in previous growth models.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] STM study of growth of manganese suicide thin films on a Si(100)-2x1 surface
    Li Wei-Cong
    Zou Zhi-Qiang
    Wang Dan
    Shi Gao-Ming
    [J]. ACTA PHYSICA SINICA, 2012, 61 (06)
  • [2] STM STUDY ON THE INTERACTIONS OF C(70) WITH THE SI(100)2X1 SURFACE
    WANG, XD
    XUE, QK
    HASHIZUME, T
    SHINOHARA, H
    NISHINA, Y
    SAKURAI, T
    [J]. PHYSICAL REVIEW B, 1994, 49 (11): : 7754 - 7758
  • [3] Absolute coverage of cesium on the Si(100)-2X1 surface
    Sherman, WB
    Banerjee, R
    DiNardo, NJ
    Graham, WR
    [J]. PHYSICAL REVIEW B, 2000, 62 (07): : 4545 - 4548
  • [4] MANIPULATING CHLORINE ATOM BONDING ON THE SI(100)-(2X1) SURFACE WITH THE STM
    BOLAND, JJ
    [J]. SCIENCE, 1993, 262 (5140) : 1703 - 1706
  • [5] Comparative study of the structural and electronic properties of the surface Si(100)(2x1)-Sb and Si(100)(2x1)-As
    Gonzalez-Mendez, ME
    de la Garza, L
    Takeuchi, N
    [J]. REVISTA MEXICANA DE FISICA, 1998, 44 (04) : 381 - 384
  • [6] Intriguing kinetics for chlorine etching of the Si(100)-(2x1) surface
    Dohnálek, Z
    Nishino, H
    Kamoshida, N
    Yates, JT
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1999, 110 (08): : 4009 - 4012
  • [7] Vacancy charging on Si(100)-(2X1): Consequences for surface diffusion and STM imaging
    Chan, HYH
    Dev, K
    Seebauer, EG
    [J]. PHYSICAL REVIEW B, 2003, 67 (03)
  • [8] SURFACE INFRARED STUDY OF SI(100)-(2X1)H
    CHABAL, YJ
    RAGHAVACHARI, K
    [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (03) : 282 - 285
  • [9] THE GROWTH OF AG ON SI(100)-2X1
    BORENSZTEIN, Y
    ALAMEH, R
    [J]. APPLIED SURFACE SCIENCE, 1993, 65-6 : 735 - 741
  • [10] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE
    ASAI, M
    UEBA, H
    TATSUYAMA, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2577 - 2583
12345