Effects of damage rate on defect cluster formation in copper under low dose irradiation

被引：4
|
作者：
Xu, Q [1 ]
Heinisch, HL
Yoshiie, T
机构：
[1] Kyoto Univ, Inst Res Reactor, Osaka 5900494, Japan
[2] Pacific NW Lab, Richland, WA 99352 USA
来源：
JOURNAL OF COMPUTER-AIDED MATERIALS DESIGN | 1999年 / 6卷 / 2-3期
关键词：
cascade effects; copper; defect cluster; dose rate; MC simulation;
D O I：
10.1023/A:1008730318477
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
The dependence of defect cluster formation on dose rate is an important factor in understanding the mechanisms of microstructure evolution under irradiation. In the present study, the effects of dose rate on the formation of vacancy clusters and self-interstitial atom (SIA) clusters during low dose irradiation up to 0.01 dpa were investigated. The densities of SIA clusters formed at 200 K and 458 K and Vacancy clusters formed at 200 K were found to be independent of the dose rate. Vacancy cluster densities were found to be dependent on the dose rate at temperatures between 200 K and 458 K. The results can be explained by the migration and thermal stability of defects, which are determined by irradiation temperature.
引用
收藏
页码：215 / 223
页数：9
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