A STUDY OF 28NM LDMOS LINEAR DRAIN CURRENT DEGRADATION INDUCED BY HOT CARRIER INJECTION

被引：0

作者：

Ma, Guiying ^{[1
]}

Sun, Hao ^{[1
]}

Tang, Ling ^{[1
]}

Yang, Yongsheng ^{[1
]}

Shi, Xuejie ^{[1
]}

Lee, Byunghak ^{[1
]}

Liao, Miao ^{[1
]}

Yu, Tzuchiang ^{[1
]}

机构：

[1] SMIC, Technol R&D Ctr, 18 Zhangjiang Rd, Shanghai 201203, Peoples R China

来源：

2018 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC) | 2018年

关键词：

LDMOS; Idlin shift; HCI;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

LDMOS (Laterally Diffused Metal Oxide Semiconductor) applications get extensively in high voltage and smart power management. However, high operational drain voltage makes LDMOS devices highly vulnerable to the damage caused by HCI (hot-carrier in jection). In this paper, shallow trench isolation (STI) based LDMOS linear drain current (Idlin) degradation induced by HCI (hot carrier injection) was systematically studied with the various layout parameters of NLDMOS (n-channel LDMOS) and well implant condition using 28nm Poly/SiON logic process, extensive TCAD (Technology Computer Aided Design) simulations and experiments revealed that layout, OPC (optical proximity correction), well implant optimization can greatly improve NLDMOS linear drain current degradation induced by HCI. The physical mechanism behinds the results should be that the impact ionization region has been driven further away from the STI edge and Si/SiO2 interface with a reduction in magnitude, which can reduce Idlin shift induced by HCI stress and make sure NLDMOS HCI pass industry general criteria of Idlin shift.

引用

页数：3

共 50 条

[21] Hot carrier degradation study in PMOSFET using gated-diode drain current and charge pumping measurements
Goh, YH
Ling, CH
ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 1996, : 23 - 27
[22] Investigation on Hot-Carrier-Induced degradation of LDMOS transistor fabricated in logic CMOS process
Zheng, Huixiong
Wu, Huaqiang
Wang, Bin
2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2014,
[23] A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's
Wang, TH
Chiang, LP
Zous, NK
Hsu, CF
Huang, LY
Chao, TS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (09) : 1877 - 1882
[24] Drain current local variability from linear to saturation region in 28 nm bulk NMOSFETs
Karatsori, T. A.
Theodorou, C. G.
Haendler, S.
Dimitriadis, C. A.
Ghibaudo, G.
SOLID-STATE ELECTRONICS, 2017, 128 : 31 - 36
[25] Hot hole-induced device degradation by drain junction reverse current
Kim, K. S.
Kim, H. J.
Choi, P. H.
Park, H. S.
Joo, I. H.
Song, J. E.
Song, D. H.
Choi, B. D.
MICROELECTRONICS RELIABILITY, 2013, 53 (07) : 947 - 951
[26] Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs
张春伟
刘斯扬
孙伟锋
周雷雷
张艺
苏巍
张爱军
刘玉伟
胡久利
何骁伟
Chinese Physics Letters, 2015, (08) : 197 - 199
[27] Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs
Zhang Chun-Wei
Liu Si-Yang
Sun Wei-Feng
Zhou Lei-Lei
Zhang Yi
Su Wei
Zhang Ai-Jun
Liu Yu-Wei
Hu Jiu-Li
He Xiao-Wei
CHINESE PHYSICS LETTERS, 2015, 32 (08)
[28] Two-stage hot-carrier-induced degradation of p-type LDMOS transistors
Chen, Jone F.
Chen, Tzu-Hsiang
Ai, Deng-Ren
ELECTRONICS LETTERS, 2014, 50 (23) : 1751 - 1752
[29] Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs
张春伟
刘斯扬
孙伟锋
周雷雷
张艺
苏巍
张爱军
刘玉伟
胡久利
何骁伟
Chinese Physics Letters, 2015, 32 (08) : 197 - 199
[30] The impacts of SILC and hot carrier induced drain leakage current on the refresh time in DRAM
Hong, SH
Chun, JY
Yu, CG
Park, JT
MICROELECTRONICS RELIABILITY, 2000, 40 (8-10) : 1555 - 1560

← 1 2 3 4 5 →