Near-field surface photovoltage

被引：1

作者：

Shikler, R ^{[1
]}

Rosenwaks, Y ^{[1
]}

机构：

[1] Tel Aviv Univ, Fac Engn, Dept Phys Elect, IL-69978 Tel Aviv, Israel

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.1306916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A phenomenon called near-field surface photovoltage is presented. It is based on inducing photovoltage only at a semiconductor space-charge region using near-field illumination. The photovoltage is obtained by measuring the contact potential difference between an optical near-field force sensor and a semiconductor surface under illumination. It is shown that the near-field illumination induces photovoltage at the surface which is principally different from photovoltage induced by far-field illumination. The mechanisms that govern the different far-field and near-field photovoltage response are discussed. (C) 2000 American Institute of Physics. [S0003- 6951(00)04132-2].

引用

页码：836 / 838

页数：3

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