Near-field surface photovoltage

被引：1
|
作者：
Shikler, R [1 ]
Rosenwaks, Y [1 ]
机构：
[1] Tel Aviv Univ, Fac Engn, Dept Phys Elect, IL-69978 Tel Aviv, Israel
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 06期
关键词：
D O I：
10.1063/1.1306916
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A phenomenon called near-field surface photovoltage is presented. It is based on inducing photovoltage only at a semiconductor space-charge region using near-field illumination. The photovoltage is obtained by measuring the contact potential difference between an optical near-field force sensor and a semiconductor surface under illumination. It is shown that the near-field illumination induces photovoltage at the surface which is principally different from photovoltage induced by far-field illumination. The mechanisms that govern the different far-field and near-field photovoltage response are discussed. (C) 2000 American Institute of Physics. [S0003- 6951(00)04132-2].
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收藏
页码：836 / 838
页数：3
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