Vertical-cavity surface-emitting lasers with spatially adjustable DBR reflectivity to enable free-space photonic repeaters

被引：1
|
作者：
Bond, AE [1 ]
Dapkus, PD [1 ]
机构：
[1] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 05期
关键词：
distributed Bragg reflector lasers; optical data processing; semiconductor lasers; surface emitting lasers;
D O I：
10.1109/68.669218
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have created bidirectional high-performance top- and bottom-emitting vertical-cavity surface-emitting lasers (VC-SEL's) from a single epitaxial wafer. Using a spatially selective oxidation of AlAs layers in hybrid distributed Bragg reflectors (DBR's) of a VCSEL structure, devices processed for top emission had threshold currents of 100-110 mu A with slope efficiencies of 18%-20%. Devises from the same wafer processed for bottom substrate emission had thresholds of 110-120 mu A and slope efficiencies of 17% and 18%. This technology will greatly simplify the use of VCSEL's in large three-dimensional (3-D) parallel interconnects, photonic repeaters, and smart pixels.
引用
收藏
页码：636 / 638
页数：3
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