Sb/Cu(111): Growth, dissolution and segregation studied by AES, LEED and PES

被引：7
|
作者：
Gothelid, M
Aufray, B
Giordano, H
Gay, JM
Le Lay, G
Belkhou, R
Marsot, N
Guillot, C
机构：
[1] CNRS, CRMC2, F-13288 Marseille 9, France
[2] Ctr Univ Paris Sud, Utilisat Rayonnement Electromagnet Lab, F-91405 Orsay, France
[3] Univ Aix Marseille 1, UFR Sci Mat, Marseille, France
来源：
SURFACE REVIEW AND LETTERS | 1997年 / 4卷 / 06期
关键词：
D O I：
10.1142/S0218625X97001541
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The room temperature deposition of Sb on to Cu(111) gives rise to two different Sb states as seen from the Sb 4d shallow core level: an adstate similar to the (root 3 x root 3)R30 degrees structure formed after annealing at 400 degrees C, and an overlayer of unreacted Sb. The unreacted Sb overlayer is rapidly dissolved into a subsurface position in the crystal during annealing, where it forms a quasistable structure which is dissolved very slowly.
引用
收藏
页码：1203 / 1207
页数：5
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