NbTiN thin films deposited by hybrid HiPIMS/DC magnetron co-sputtering

被引:16
|
作者
Del Giudice, L. [1 ]
Adjam, S. [1 ]
La Grange, D. [1 ]
Banakh, O. [2 ]
Karimi, A. [1 ]
Sanjines, R. [1 ]
机构
[1] Swiss Fed Inst Technol Lausanne EPFL, SB ICMP, Stn 3, CH-1015 Lausanne, Switzerland
[2] Haute Ecole Arc Ingn HES SO, Eplatures Grise 17, CH-2300 La Chaux De Fonds, Switzerland
来源
关键词
NbTiN thin films; HiPIMS; Optical properties; Electrical resistivity; Dielectric function; DC magnetron sputtering; NIOBIUM NITRIDE FILMS; SPUTTERED NBN FILMS; MECHANICAL-PROPERTIES; BIOMEDICAL APPLICATIONS; ELECTRONIC-PROPERTIES; HARD COATINGS; TIN FILMS; TITANIUM; PHASE; GROWTH;
D O I
10.1016/j.surfcoat.2015.10.007
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Nb1 - xTixNy thin films (with 0 <= x <= 1 and 0.85 <= y <= 1.15) were deposited from Nb and Ti metallic targets using a hybrid process combining high-power impulse magnetron sputtering (HiPIMS) and DC magnetron sputtering (DCMS) techniques. Two series of Nb1-xTixNy films were deposited in which the HiPIMS mode was applied either to the Nb or to the Ti target while the second target (Ti or Nb) was operated in DCMS mode. The HiPIMS generator was operated at a fixed time-average power of 100 W (5 W cm(-2)) with a pulse-width of 50 mu s and a repetition frequency of 1000 Hz whereas the DC power applied to the second target was varied from 0 to 90 W to adjust the relative contents of Ti or Nb in the films. Depositions were performed in an Ar + N-2 atmosphere at a total pressure of 0.5 Pa. The substrate temperature was fixed at 250 degrees C and the sample holder was biased at -50 V. The films were characterized by XRD, SEM, EDS, nanoindentation, optical and electrical measurements. All the ternary films crystallize in the fcc NaCl-type of the structure. The films exhibit a dense columnar structure and their hardness values increase from 26 for TiN to 35 GPa for NbN. The optical properties of the Nb1 - xTixNy films progressively evolve from those of the fcc-NbN to those of the fcc-TiN as the Ti content x increases from 0 to 1. The room temperature resistivity value decreases from about 300 mu Omega cm (for NbN0.99) down to 25 mu Omega cm (for TiN0.98) as x increases from 0 to 1. In contrast to that, Nb1 - xTixNy films deposited under similar deposition conditions using DCMS exhibit open columnar structure, low hardness values (15 to 22 GPa), high electrical resistivity in the range of 200-360 mu Omega cm, and optical properties without clear correlation with the chemical composition of the films. The peculiar physical properties of these films, compared with those obtained by the hybrid process, are mainly attributed to their open columnar morphology. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:99 / 106
页数:8
相关论文
共 50 条
  • [1] AlTiCrN coatings deposited by hybrid HIPIMS/DC magnetron co-sputtering
    Zhou, Hui
    Zheng, Jun
    Gui, Binhua
    Geng, Dongsen
    Wang, Qimin
    VACUUM, 2017, 136 : 129 - 136
  • [2] Microstructure and properties of TiAlCrN ceramic coatings deposited by hybrid HiPIMS/DC magnetron co-sputtering
    Gui, Binhua
    Zhou, Hui
    Zheng, Jun
    Liu, Xingguang
    Feng, Xingguo
    Zhang, Yanshuai
    Yang, Lamaocao
    CERAMICS INTERNATIONAL, 2021, 47 (06) : 8175 - 8183
  • [3] Properties of TiSiN coatings deposited by hybrid HiPIMS and pulsed-DC magnetron co-sputtering
    Yazdi, M. Arab Pour
    Lomello, F.
    Wang, J.
    Sanchette, F.
    Dong, Z.
    White, T.
    Wouters, Y.
    Schuster, F.
    Billard, A.
    VACUUM, 2014, 109 : 43 - 51
  • [4] Characterization of Nanostructured TiZrN Thin Films Deposited by Reactive DC Magnetron Co-sputtering
    Chinsakolthanakorn, S.
    Buranawong, A.
    Witit-anun, N.
    Chaiyakun, S.
    Limsuwan, P.
    ISEEC, 2012, 32 : 571 - 576
  • [5] Structure and Composition of TiVN Thin Films Deposited by Reactive DC Magnetron Co-sputtering
    Deeleard, T.
    Buranawong, A.
    Choeysuppaket, A.
    Witit-anun, N.
    Chaiyakun, S.
    Limsuwan, P.
    ISEEC, 2012, 32 : 1000 - 1005
  • [6] Preparation and properties of thin Pt-Ir films deposited by dc magnetron co-sputtering
    Topalov, G.
    Ganske, G.
    Lefterova, E.
    Schnakenberg, U.
    Slavcheva, E.
    INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2011, 36 (23) : 15437 - 15445
  • [7] Electrochemical characteristics of NixN thin films deposited by DC and HiPIMS reactive magnetron sputtering
    Keraudy, J.
    Athouel, L.
    Hamon, J.
    Girault, B.
    Gloaguen, D.
    Richard-Plouet, M.
    Jouan, P. -Y.
    THIN SOLID FILMS, 2019, 669 : 659 - 664
  • [8] Co-sputtering NbTiN thin films on PSG/Si substrates
    Wang, Chen
    Zhang, Jingjiao
    Zhang, Lu
    You, Lixing
    Su, Xiaodong
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2016, 29 (02):
  • [9] Properties of NbTiN thin films prepared by reactive DC magnetron sputtering
    Myoren, H
    Shimizu, T
    Iizuka, T
    Takada, S
    IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2001, 11 (01) : 3828 - 3831
  • [10] Thin CuInSi Film Deposited by Magnetron Co-sputtering
    Xie, Jiansheng
    Li, Jinhua
    Luan, Ping
    MATERIALS SCIENCE AND INFORMATION TECHNOLOGY, PTS 1-8, 2012, 433-440 : 302 - 305