Thin CuInSi Film Deposited by Magnetron Co-sputtering

被引：0

作者：

Xie, Jiansheng ^{[1
]}

Li, Jinhua ^{[1
]}

Luan, Ping ^{[1
]}

机构：

[1] Changzhou Univ, Sch Math & Phys, Changzhou 213164, Jiangsu, Peoples R China

来源：

MATERIALS SCIENCE AND INFORMATION TECHNOLOGY, PTS 1-8 | 2012年 / 433-440卷

关键词：

magnetron co-sputtering; CuInSi film; X-ray diffraction; OPTICAL-PROPERTIES; PHOTOVOLTAIC APPLICATIONS;

D O I：

10.4028/www.scientific.net/AMR.433-440.302

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N-2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, In2O3 and other peaks. The morphology of the film surface was studied by SEM. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.

引用

页码：302 / 305

页数：4

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