Constant-resistance deep-level transient spectroscopy in submicron metal-oxide-semiconductor field-effect transistors

This article describes a new variation of a deep-level transient spectroscopy (DLTS) technique convenient for the measurement of submicron field-effect transistors where standard capacitance DLTS cannot be used. Constant-resistance (CR) DLTS is similar to the conductance DLTS, but it is more sensitive and it does not require simultaneous measurement of the transconductance g(m) or surface mobility mu for calculation of the trap concentrations. In addition, the DLTS signal is largely independent of the transistor size, thus allowing measurements of very small-size transistors. The proposed technique is not restricted to metal-oxide-semiconductor field-effect transistors, but can be used also to study other field-effect transistors. (C) 1998 American Institute of Physics. [S0021-8979(98)01902-1].