Oriented PbZrxTi1-xO3 thin films obtained at low substrate temperature by pulsed laser deposition

被引：22
|
作者：
Verardi, P
Dinescu, M
Craciun, F
Sandu, V
机构：
[1] CNR, Ist Acust OM Corbino, I-00189 Rome, Italy
[2] Inst Atom Phys, R-76900 Bucharest, Romania
来源：
THIN SOLID FILMS | 1997年 / 311卷 / 1-2期
关键词：
laser ablation; piezoelectric effect; plasma processing and deposition;
D O I：
10.1016/S0040-6090(97)00693-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
One step deposition of oriented thin films of PbZrxTi1-xO3 onto (100)- and (111)-Si substrates by pulsed laser ablation at low substrate temperatures (375 degrees C) is reported. X-ray diffraction analysis showed that the films grew with preferential (111) orientation on both substrates but energy dispersive spectroscopy revealed different compositions despite identical targets and substrate temperatures. Direct piezoelectric measurements showed good piezoelectric properties of the films, obtained in the absence of any subsequent poling. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：171 / 176
页数：6
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