A 1.4dB noise figure CMOS LNA for W-CDMA application

被引：2
|
作者：
Noh, Norlaili Mohd [1 ]
Azni Zulkifli, Tun Zainal [1 ]
机构：
[1] Univ Sains Malaysia, Sch Elect & Elect Engn, RFIC Design Grp, Engn Campus, Nibong Tebal 14300, Pulau Pinang, Malaysia
来源：
2006 INTERNATIONAL RF AND MICROWAVE CONFERENCE, PROCEEDINGS | 2006年
关键词：
W-CDMA CMOS LNA; inductive source degeneration; direct-conversion receiver; low NF; power constrained noise optimization;
D O I：
10.1109/RFM.2006.331056
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a 2.14 GHz low noise amplifier (LNA) intended for use in a Wide-band Code Division Multiple Access (W-CDMA) receiver. The LNA has been implemented in RIF 0.18 mu m CMOS process. The amplifier provides a forward gain (S-21) Of I I dB with a noise figure of only 1.4dB from a 1.8V supply voltage. The input power 1dB-compression point of the LNA is -11dBm and the input referred 3(rd)- order intercept point is 6.6dBm. Total power consumption is 23mW as current consumed by the circuit is 12.7mA. The LNA is differential in nature and is of the inductive source degeneration type. In this paper, detailed analysis of the LNA architecture is presented.
引用
收藏
页码：143 / +
页数：3
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