Electronic density of states at the ultrathin SiO2/Si interfaces

被引：0
|
作者：
Hirose, M [1 ]
Alay, JL [1 ]
Yoshida, T [1 ]
Miyazaki, S [1 ]
机构：
[1] Hiroshima Univ, Dept Elect Engn, Higashihiroshima 739, Japan
来源：
PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996 | 1996年 / 96卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：485 / 496
页数：12
相关论文
共 50 条
  • [1] Photoelectron yield spectroscopy of electronic states at ultrathin SiO2/Si interfaces
    Miyazaki, S
    Maruyama, T
    Kohno, A
    Hirose, M
    MICROELECTRONIC ENGINEERING, 1999, 48 (1-4) : 63 - 66
  • [2] Electronic defect states at ultrathin SiO2/Si interfaces from photoelectron yield spectroscopy
    Miyazaki, S
    Maruyama, T
    Kohno, A
    Hirose, M
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 1999, 2 (02) : 185 - 190
  • [3] SPECTRUM OF ELECTRONIC STATES IN ULTRATHIN AMORPHOUS SI/SIO2 SUPERLATTICES
    VINOGRADOV, EA
    ZAYATS, AV
    PUDONIN, FA
    FIZIKA TVERDOGO TELA, 1991, 33 (01): : 197 - 201
  • [4] Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface
    Miyazaki, S
    Tamura, T
    Ogasawara, M
    Itokawa, H
    Murakami, H
    Hirose, M
    APPLIED SURFACE SCIENCE, 2000, 159 : 75 - 82
  • [5] The valence band alignment at ultrathin SiO2/Si interfaces
    Alay, JL
    Hirose, M
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (03) : 1606 - 1608
  • [6] Electronic structures of SiO2/Si(001) interfaces
    Yamasaki, T
    Kaneta, C
    Uchiyama, T
    Uda, T
    Terakura, K
    PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4, 2000, 2000 (02): : 295 - 305
  • [7] Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces
    Miyazaki, S
    Nishimura, H
    Fukuda, M
    Ley, L
    Ristein, J
    APPLIED SURFACE SCIENCE, 1997, 113 : 585 - 589
  • [8] ELECTRONIC STATES OF SI-SIO2 INTERFACES
    LAUGHLIN, RB
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 456 - 456
  • [9] Decrease in gap states at ultrathin SiO2/Si interfaces by crown-ether cyanide treatment
    Kobayashi, H
    Asano, A
    Takahashi, M
    Yoneda, K
    Todokoro, Y
    APPLIED PHYSICS LETTERS, 2000, 77 (26) : 4392 - 4394
  • [10] Electronic structure at realistic Si(100)-SiO2 interfaces
    Giustino, F
    Bongiorno, A
    Pasquarello, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (11B): : 7895 - 7898
12345