Understanding evolution of electronic energy bands in low turn-on voltage DACz polymer diodes

被引：0
|
作者：
Swathi, S. K. [1 ]
Ranjith, K. [1 ]
Ramamurthy, Praveen C. [1 ]
机构：
[1] Indian Inst Sci, Dept Mat Engn, Bangalore, Karnataka, India
来源：
2014 IEEE 2ND INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE) | 2014年
关键词：
Scanning tunneling microscopy; Mobility; Energy band; Turn on voltage; Polymer diode;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, energy band structure in a derivative of the conducting polymer carbazole was analyzed by scanning tunneling microscopy and spectroscopy (STM and STS). The band gap formed by evolved energy bands was found by STS to be of 1.7 eV, which may be compared with the electronic bandgap obtained by the bulk DACz diode, which is 0.59 eV. DACz diodes have a very low turn-on voltage of 0.06 V, which makes it very desirable material for the transistor applications. The hole mobility of DACz polymer was observed to be 4x10-6 m(2)/V. s, which is relatively high for a polymer material.
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页数：4
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