Evaluation of passive film growth models with the electrochemical quartz crystal microbalance on PVD deposited Cr

被引:49
|
作者
Olsson, COA [1 ]
Hamm, D [1 ]
Landolt, D [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Dept Mat, Lab Met Chim, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1149/1.1394025
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
With the electrochemical quartz crystal microbalance, it is possible to obtain time-resolved in situ estimates of thickness changes of passive films. Thickness changes recorded for physical vapor deposited pure Cr during potential scans in the passive region in acidic media were compared to two different theories for passive film growth: the potential change is governing the growth rare through a reaction at either of the oxide film interfaces (interface model), or it controls the ion conduction current through the film (high field model). The two models proved equally successful in predicting the film growth curves for varying potential-step amplitudes and sweep rates. However, for experiments with different initial passive film thicknesses, the interface model was more successful in predicting film growth. (C) 2000 The Electrochemical Society. S0013-4651(00)03-072-X. All rights reserved.
引用
收藏
页码:4093 / 4102
页数:10
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