The study for substrate temperature effects on thermoelectric properties of the amorphous Si-Ge-Au thin films

被引：2
|
作者：
Miyata, A [1 ]
Sato, Y [1 ]
Okamoto, Y [1 ]
Kawahara, T [1 ]
Morimoto, J [1 ]
机构：
[1] Natl Def Acad, Dept Mat Sci & Engn, Yokosuka, Kanagawa 2398686, Japan
来源：
XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02 | 2002年
关键词：
D O I：
10.1109/ICT.2002.1190356
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
The control of thermoelectric properties is attempted by changing the. substrate temperature. Amorphous thin films were prepared by the alternate deposition of Si and Ge doped heavily with Au in ultrahigh vacuum chamber. The temperature dependence of electrical resistivity of the sample deposited at 600 K has unique characteristics. The power factor decreases as the substrate temperature increases. Electrical resistivity and thermoelectric power have different tendency for the substrate temperature. The power factor can be enhanced by controlling electrical resistivity and thermoelectric power independently at the optimum substrate temperature.
引用
收藏
页码：442 / 445
页数：4
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