Efficient Raman amplification in silicon-on-insulator waveguides

被引:116
|
作者
Liang, TK [1 ]
Tsang, HK [1 ]
机构
[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
关键词
D O I
10.1063/1.1807960
中图分类号
O59 [应用物理学];
学科分类号
摘要
We describe a silicon-on-insulator waveguide Raman amplifier which achieves a large fiber-to-fiber optical gain of 6.8 dB using stimulated Raman scattering in a 1.7-cm-long silicon waveguide. By using picosecond pulse pumping at 1557.4 nm wavelength, high net optical gain at the first-order Stokes wavelength of 1694.6 nm was measured. The optical loss from two-photon absorption generated free carriers was reduced by using a low pulse duty cycle and picosecond pulse pumping. (C) 2004 American Institute of Physics.
引用
收藏
页码:3343 / 3345
页数:3
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