Optical properties of RF-MBE grown AlGaAsN

被引：0

作者：

Yamamoto, K

Uchida, M

Yamamoto, A

Masuda, A

Hashimoto, A

机构：

[1] Univ Fukui, Dept Elect & Elect Engn, Fukui 9108507, Japan

[2] JAIST, Tatsunokuchi, Ishikawa 9231292, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2002年 / 234卷 / 03期

关键词：

D O I：

10.1002/1521-3951(200212)234:3<915::AID-PSSB915>3.0.CO;2-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Raman scattering and infrared absorption properties of RF-MBE grown AlGaAsN layers have been reported in order to investigate the microscopic lattice structures related with the nitrogen incorporation. Several new Raman modes of the Al-N bonds have been observed at 449, 500, and 650 cm(-1) in the Raman spectra of AlGaAsN (Al: 18-100%, N: similar to2%) instead of the mode of Ga-N bonds. The results strongly indicated that most of the N atoms form the Al-N bonds in the AlGaAsN layers. The infrared absorption spectra of the AlGaAsN have shown clearly that the TOAlN mode appears at 500 cm(-1). instead of the TOGaN mode that appeared at 469 cm(-1) in GaAsN. The peak shift and the broadening of the absorption peak of the TOAlN mode will be discussed in terms of variation of the statistical distributions of the AlnGa4-nN (n = 0, 1, 2, 3. 4) tetrahedral unit structures with increasing the Al amount.

引用

页码：915 / 918

页数：4

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