Theory of topological superconductivity in doped IV-VI semiconductors

被引:0
|
作者
Li, Zhe [1 ,2 ,3 ]
Qin, Shengshan [4 ]
Ren, Jie [1 ,2 ,3 ]
Song, Zhida [5 ]
Shao, Dexi [1 ,2 ,6 ]
Fang, Chen [1 ,2 ,4 ,7 ]
机构
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[4] Chinese Acad Sci, Kavli Inst Theoret Sci, Beijing 100190, Peoples R China
[5] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
[6] Hangzhou Normal Univ, Dept Phys, Hangzhou 311121, Peoples R China
[7] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
关键词
SINGLE DIRAC CONE; EXPERIMENTAL REALIZATION; CRYSTALLINE INSULATOR; MAJORANA FERMIONS; BOUND-STATES; SEMIMETAL; DISCOVERY; SIGNATURE; ANYONS;
D O I
10.1103/PhysRevB.105.134517
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We theoretically study potential unconventional superconductivity in doped AB-type IV-VI semiconductors, based on a minimal effective model with interaction up to the next-nearest neighbors. According to the experimental implications, we focus on the spin-triplet channels and obtain the superconducting phase diagram with respect to the anisotropy of the Fermi surfaces and the interaction strength. Abundant nodal and nodeless states with different symmetry breaking appear in the phase diagram, and all the states are time-reversal invariant and topologically nontrivial. Specifically, the various nodal superconducting ground states, dubbed as the topological Dirac superconductors, are featured by Dirac nodes in the bulk and Majorana arcs on the surface; among the full-gap states, there exist a mirror-symmetry-protected second-order topological superconductor state favoring helical Majorana hinge cones, and different first-order topological superconductor states supporting four surface Majorana cones. The experimental verification of the different kinds of superconducting ground states is also discussed.
引用
收藏
页数:25
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