Double spin-torque magnetic tunnel junction devices for last-level cache applications

被引：18

作者：

Hu, G. ^{[1
]}

Safranski, C. ^{[1
]}

Sun, J. Z. ^{[1
]}

Hashemi, P. ^{[1
]}

Brown, S. L. ^{[1
]}

Bruley, J. ^{[1
]}

Buzi, L. ^{[1
]}

D'Emic, C. P. ^{[1
]}

Galligan, E. ^{[1
]}

Gottwald, M. G. ^{[1
]}

Gunawan, O. ^{[1
]}

Lee, J. ^{[1
]}

Karimeddiny, S. ^{[1
]}

Trouilloud, P. L. ^{[1
]}

Worledge, D. C. ^{[1
]}

机构：

[1] IBM Samsung, IBM TJ Watson Res Ctr, MRAM Alliance, Yorktown Hts, NY USA

来源：

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM | 2022年

关键词：

D O I：

10.1109/IEDM45625.2022.10019402

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We experimentally demonstrate reliable 300 ps switching in arrays of 35 nm double spin-torque magnetic tunnel junctions (DS-MTJs), and also demonstrate a new free-layer design with improved activation energy and magnetoresistance. We establish a new method to characterize the DS-MTJ devices for materials feedback, by introducing and experimentally verifying a simple device-physics model. The model and data show that, compared to a single MTJ (SMTJ), the DS-MTJ has lower switching current, faster switching speed, and better dependence on resistance-area product (RA), meeting key requirements for last-level cache.

引用

页数：4

共 50 条

[31] Spin-Torque Oscillator Based on Magnetic Tunnel Junction with a Perpendicularly Magnetized Free Layer and In-Plane Magnetized Polarizer
Kubota, Hitoshi
Yakushiji, Kay
Fukushima, Akio
Tamaru, Shingo
Konoto, Makoto
Nozaki, Takayuki
Ishibashi, Shota
Saruya, Takeshi
Yuasa, Shinji
Taniguchi, Tomohiro
Arai, Hiroko
Imamura, Hiroshi
APPLIED PHYSICS EXPRESS, 2013, 6 (10)
[32] BIAS DEPENDENCE OF SPIN TRANSFER TORQUE IN A MAGNETIC TUNNEL JUNCTION
Cui, J.
Yang, Y. H.
Wang, J.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2009, 23 (05): : 695 - 702
[33] Perpendicular spin torque promotes synchronization of magnetic tunnel junction based spin torque oscillators
Zhou, Yan
Akerman, Johan
APPLIED PHYSICS LETTERS, 2009, 94 (11)
[34] Conditions for microwave amplification due to spin-torque dynamics in magnetic tunnel junctions
Xue, Lin
Wang, Chen
Cui, Yong-Tao
Katine, J. A.
Buhrman, R. A.
Ralph, D. C.
APPLIED PHYSICS LETTERS, 2011, 99 (02)
[35] Spin-Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing
Zhang, Xueying
Cai, Wenlong
Wang, Mengxing
Pan, Biao
Cao, Kaihua
Guo, Maosen
Zhang, Tianrui
Cheng, Houyi
Li, Shaoxin
Zhu, Daoqian
Wang, Lin
Shi, Fazhan
Du, Jiangfeng
Zhao, Weisheng
ADVANCED SCIENCE, 2021, 8 (10)
[36] Tunnel magnetoresistance and spin transfer torque in magnetic tunnel junction with embedded nanoparticles
Useinov, Niazbeck
MOSCOW INTERNATIONAL SYMPOSIUM ON MAGNETISM (MISM 2017), 2018, 185
[37] Spin-torque magnetic resonance of Fe nanoparticles in Fe/MgO/Fe magnetic tunnel junctions
Miwa, S.
Mizuochi, N.
Shinjo, T.
Suzuki, Y.
Kim, S.
Jo, Y.
Park, S.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 62 (12) : 2206 - 2209
[38] Enhanced spin-torque in double tunnel junctions using a nonmagnetic-metal spacer
Chen, C. H.
Cheng, Y. H.
Ko, C. W.
Hsueh, W. J.
APPLIED PHYSICS LETTERS, 2015, 107 (15)
[39] Spin-torque magnetic resonance of Fe nanoparticles in Fe/MgO/Fe magnetic tunnel junctions
S. Miwa
N. Mizuochi
T. Shinjo
Y. Suzuki
S. Kim
Y. Jo
S. Park
Journal of the Korean Physical Society, 2013, 62 : 2206 - 2209
[40] Microarchitectural Exploration of STT-MRAM Last-level Cache Parameters for Energy-efficient Devices
Marinelli, Tommaso
Gomez Perez, Jignacio
Tenllado, Christian
Komalan, Manu
Gupta, Mohit
Catthoor, Francky
ACM TRANSACTIONS ON EMBEDDED COMPUTING SYSTEMS, 2022, 21 (01)

← 1 2 3 4 5 →