Double spin-torque magnetic tunnel junction devices for last-level cache applications

被引：18

作者：

Hu, G. ^{[1
]}

Safranski, C. ^{[1
]}

Sun, J. Z. ^{[1
]}

Hashemi, P. ^{[1
]}

Brown, S. L. ^{[1
]}

Bruley, J. ^{[1
]}

Buzi, L. ^{[1
]}

D'Emic, C. P. ^{[1
]}

Galligan, E. ^{[1
]}

Gottwald, M. G. ^{[1
]}

Gunawan, O. ^{[1
]}

Lee, J. ^{[1
]}

Karimeddiny, S. ^{[1
]}

Trouilloud, P. L. ^{[1
]}

Worledge, D. C. ^{[1
]}

机构：

[1] IBM Samsung, IBM TJ Watson Res Ctr, MRAM Alliance, Yorktown Hts, NY USA

来源：

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM | 2022年

关键词：

D O I：

10.1109/IEDM45625.2022.10019402

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We experimentally demonstrate reliable 300 ps switching in arrays of 35 nm double spin-torque magnetic tunnel junctions (DS-MTJs), and also demonstrate a new free-layer design with improved activation energy and magnetoresistance. We establish a new method to characterize the DS-MTJ devices for materials feedback, by introducing and experimentally verifying a simple device-physics model. The model and data show that, compared to a single MTJ (SMTJ), the DS-MTJ has lower switching current, faster switching speed, and better dependence on resistance-area product (RA), meeting key requirements for last-level cache.

引用

页数：4

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