Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics

被引:52
|
作者
Kittler, M.
Yu, X.
Mchedlidze, T.
Arguirov, T.
Vyvenko, O. F.
Seifert, W.
Reiche, M.
Wilhelm, T.
Seibt, M.
Voss, O.
Wolff, A.
Fritzsche, W.
机构
[1] IHP, D-15236 Frankfurt, Germany
[2] Brandenburg Tech Univ Cottbus, IHP BTU Joint Lab, D-03046 Cottbus, Germany
[3] MPI Mikrostrukt Phys, D-06120 Halle, Germany
[4] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany
[5] IPHT, D-07745 Jena, Germany
关键词
biomolecules; dislocation networks; LEDs; semiconductors; silicon;
D O I
10.1002/smll.200600539
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 mu m with an efficiency potential estimated at 1% is demonstrated.
引用
收藏
页码:964 / 973
页数:10
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