Regular dislocation networks in silicon part I: Structure

被引：10

作者：

Wilhelm, T. ^{[1
]}

Mchedlidze, T. ^{[2
]}

Yu, X. ^{[3
]}

Arguirov, T. ^{[3
]}

Kittler, M. ^{[2
,3
]}

Reiche, M. ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[2] IHP BTU Joint Lab, D-03046 Cottbus, Germany

[3] IHP microelect, D-15236 Frankfurt, Germany

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII | 2008年 / 131-133卷

关键词：

dislocations; dislocation network; wafer bonding;

D O I：

10.4028/www.scientific.net/SSP.131-133.571

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dislocation networks obtained by hydrophobic wafer bonding of Si (100) are investigated. The twist and tilt misorientations induce two interacting dislocation networks. Advanced bonding techniques are applied and optimized allowing to eliminate the tilt and to control the twist misorientation. At very low twist angles the interfaces no longer exhibit regular dislocation networks. Properties of dislocation networks are discussed.

引用

页码：571 / +

页数：2

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