The role of surface passivation in integrated sub-bandgap on-chip silicon photodetectors

被引：0
|
作者：
Gherabli, Rivka [1 ]
Grajower, Meir [1 ]
Shappir, Joseph [1 ]
Mazurski, Noa [1 ]
Levy, Uriel [1 ]
机构：
[1] Hebrew Univ Jerusalem, Ctr Nanosci & Nanotech, Fac Sci, Dept Appl Phys, IL-91904 Jerusalem, Israel
来源：
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2019年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate the role of passivation in silicon photonics photodetectors based on defect states operating in the sub bandgap regime. Upon passivation removal, higher responsivity is obtained alongside with loss reduction, surprisingly improving over time. (C) 2019 The Author(s)
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页数：2
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