Aligned-Crystalline Si Films on Non-Single-Crystalline Substrates

We summarize recent progress in growth and characterization of aligned-crystal line silicon (ACSi) films on polycrystalline metal and amorphous glass substrates. The ACSi deposition process uses, as a key technique, ion-beam-assisted deposition (IBAD) texturing on a non-single-crystalline substrate to achieve a biaxially-oriented (i.e., with preferred out-of-plane and in-plane crystallographic orientations) IBAD seed layer, upon which homo- and hetero-epitaxial buffer layers and hetero-epitaxial silicon (i.e., ACSi) films with good electronic properties can be grown. We have demonstrated the versatility of our approach by preparing ACSi films on customized architectures, including fully insulating and transparent IBAD layer and buffer layers based on oxides on glass and flexible metal tape, and conducting and reflective IBAD layer and buffer layers based on nitrides on flexible metal tape. Optimized 0.4-mu m-thick ACSi films demonstrate out-of-plane and in-plane mosaic spreads of 0.8 degrees and 1.3 degrees, respectively, and a room-temperature Hall mobility of similar to 90 cm(2/)V/s (similar to 50% of what is achievable with epitaxial single-crystalline Si films, and similar to 1000 times that of amorphous Si films) for a p-type doping concentration of similar to 4x10(16) cm(-3). By using various experimental techniques, we have confirmed the underlying crystalline order and the superior electrical characteristics of low-angle (<5 degrees) grain boundaries in ACSi films. Forming gas anneal experiments indicate that Si films with low-angle grain boundaries do not need to be passivated to demonstrate improved majority carrier transport properties. Measurements on metal-insulator-semiconductor structures using ACSi films yield near-electronic-grade surface properties and low surface defect densities in the ACSi films. A prototype n+/p/p+-type diode fabricated using a 4.2-mu m-thick ACSi film shows minority carrier lifetime of similar to 3 mu s, an estimated diffusion length of similar to 30 mu m in the p-Si layer with a doping concentration of 5x10(16) cm(-3), and external quantum efficiency of similar to 80% at 450 nm with the addition of an MgO film anti-reflector.