Si-SiO2 interface passivation using hydrogen and deuterium implantation

被引：7

作者：

Kundu, T ^{[1
]}

Misra, D ^{[1
]}

机构：

[1] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 02期

关键词：

D O I：

10.1149/1.1843752

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Hydrogen/deuterium was implanted in <100> silicon to passivate dangling bonds at the Si/SiO2 interface when a thin oxide is grown on implanted silicon substrate. It was observed that implantation energy and dose influence the interface passivation. Measured interface states at the Si/SiO2 interface suggest an isotope effect where deuterium implanted devices yielded better interface passivation compared to that of hydrogen implanted devices. Diffusion of implanted hydrogen and deuterium to the interface is affected by the implantation damage. (C) 2004 The Electrochemical Society.

引用

页码：G35 / G37

页数：3

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