Influence of heat treatment on field emission characteristics of boron nitride thin films

被引：3
|
作者：
Li, WQ [1 ]
Gu, GR [1 ]
Li, YG [1 ]
He, Z [1 ]
Feng, W [1 ]
Liu, LH [1 ]
Zhao, CH [1 ]
Zhao, YN [1 ]
机构：
[1] Jilin Univ, Natl Key Lab Superhard Mat, Changchun 130023, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2005年 / 239卷 / 3-4期
关键词：
BN films; heat treatment; field emission; annealing temperature; threshold electric fields; negative electron affinity effect; emission current;
D O I：
10.1016/j.apsusc.2004.06.009
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Boron nitride (BN) nanometer thin films are synthesized on Si (1 0 0) substrates by RF reactive magnetron sputtering. Then the film surfaces are treated in the case of the base pressure below 5 x 10(-4) Pa and the temperature of 800 and 1000 degreesC, respectively. And the films are studied by Fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics at different annealing temperature. The results show that the surface heat treatment makes no apparent influence on the surface morphology of the BN films. The transformations of the sample emission characteristics have to do with the surface negative electron affinity (NEA) of the films possibly. The threshold electric fields are lower for BN samples without heat-treating than the treated films, which possibly ascribed to the surface negative electron affinity effect. A threshold field of 8 V/mum and the emission current of 80 muA are obtained. The surface NEA is still presence at the heat treatment temperature of 800 degreesC and disappeared at temperature of 1000 degreesC. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：432 / 436
页数：5
相关论文
共 50 条
  • [21] Field emission mechanism from nanocrystalline cubic boron nitride films
    Wang, B
    Wang, RZ
    Zhou, H
    Yan, XH
    Cao, JX
    Wang, H
    Yan, H
    MICROELECTRONICS JOURNAL, 2004, 35 (04) : 371 - 374
  • [22] Optical absorption edge characteristics of cubic boron nitride thin films
    Chen, GH
    Zhang, XW
    Wang, B
    Song, XM
    Cui, BT
    Yan, H
    APPLIED PHYSICS LETTERS, 1999, 75 (01) : 10 - 12
  • [23] Characterization of Boron Nitride Thin Films
    Chubarov, M.
    Pedersen, H.
    Hogberg, H.
    Filippov, S.
    Engelbrecht, J. A. A.
    O'Connel, J.
    Henry, A.
    2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR), 2013,
  • [24] Electron affinity and field emission characteristics of boron carbon nitride film
    Kimura, C
    Okada, K
    Funakawa, S
    Sakata, S
    Sugino, T
    DIAMOND AND RELATED MATERIALS, 2005, 14 (3-7) : 719 - 723
  • [25] Field-emission characteristics of boron-carbon-nitride nanofilm
    Kimura, C
    Shima, H
    Okada, K
    Funakawa, S
    Sugino, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (05): : 1948 - 1951
  • [26] The field emission characteristics of carbon nanotubes coated by boron nitride film
    Su, C. Y.
    Juang, Z. Y.
    Chen, Y. L.
    Leou, K. C.
    Tsai, C. H.
    DIAMOND AND RELATED MATERIALS, 2007, 16 (4-7) : 1393 - 1397
  • [27] Adhered property of cubic boron nitride thin films and cutting property by cubic boron nitride thin films
    Noma, Masao
    Komatsu, Eiji
    Tokoro, Toshio
    Ogawa, Keiji
    Nakagawa, Heisaburo
    Journal of the Vacuum Society of Japan, 2008, 51 (06) : 392 - 396
  • [28] Field emission characteristics of boron carbon nitride films synthesized by plasma-assisted chemical vapor deposition
    Sugino, T
    Hieda, H
    DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) : 1233 - 1237
  • [29] Enhanced electron field emission from nanocrystalline orthorhombic boron nitride films
    Yang, Xuxin
    Wang, Xiaojin
    Ye, Quan-Lin
    Mao, Hongying
    Cao, Yan
    MATERIALS LETTERS, 2019, 239 : 79 - 81
  • [30] Field emission characteristics of thin MPCVD diamond films
    Engemann, J
    Fedosenko, G
    Raiko, V
    Theirich, D
    ADVANCED TECHNOLOGIES BASED ON WAVE AND BEAM GENERATED PLASMAS, 1999, 67 : 479 - 480
12345