Properties of truly bulk GaN monocrystals grown by ammonothermal method

被引：18

作者：

Dwilinski, Robert ^{[1
]}

Doradzinski, Roman ^{[1
]}

Garczynski, Jerzy ^{[1
]}

Sierzputowski, Leszek ^{[1
]}

Kucharski, Robert ^{[1
]}

Rudzinski, Mariusz ^{[2
]}

Zajac, Marcin ^{[1
]}

Kudrawiec, Robert ^{[3
]}

机构：

[1] AMMONO, Czerwonego Krzyta 2-31, PL-00377 Warsaw, Poland

[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[3] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 12 | 2009年 / 6卷 / 12期

关键词：

PRESSURE; LAYERS; PLANE; HVPE;

D O I：

10.1002/pssc.200982582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We are presenting some physical and chemical basis of ammonothermal method of bulk gallium nitride synthesis in ammonobasic route. Excellent structural and wide spectrum of electrical parameters of truly bulk GaN crystals obtained in this way are revealed. In considered crystals a low dislocation density (5 x 10(3) cm(-2)) is attainable. At the same time the crystal lattice is extremely flat and the (0002) rocking curve is very narrow (FWHM=16 arcsec). Both polar and nonpolar ammonothermal GaN substrates enabled to grow high optical quality, strain-free homoepitaxial layers. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2661 / +

页数：2

共 50 条

[41] Structural and Optical Properties of Semipolar GaN Substrates Obtained by Ammonothermal Method
Kucharski, Robert
Zajac, Marcin
Doradzinski, Roman
Garczynski, Jerzy
Sierzputowski, Leszek
Kudrawiec, Robert
Serafinczuk, Jaroslaw
Misiewicz, Jan
Dwilinski, Robert
APPLIED PHYSICS EXPRESS, 2010, 3 (10)
[42] Study on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method
Lu, Wenhao
Li, Tengkun
Ren, Guoqiang
Xia, Zhenghui
Xie, Kaihe
Li, Shaozhe
Shen, Liangkun
Xu, Ke
CRYSTENGCOMM, 2024, 26 (16) : 2166 - 2171
[43] Structural and optical properties of semipolar gan substrates obtained by ammonothermal method
AMMONO sp. z.o.o., Czerwonego Krzyza 2/31, 00-377 Warsaw, Poland
不详
不详
Appl. Phys. Express, 1882, 10
[44] Transparent, conductive bulk GaN by high temperature ammonothermal growth
Jiang, Wenkan
Ehrentraut, Dirk
Cook, Jonathan
Kamber, Derrick S.
Pakalapati, Rajeev T.
D'Evelyn, Mark P.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (05): : 1069 - 1074
[45] The electrical properties of bulk GaN crystals grown by HVPE
Gu, Hong
Ren, Guoqiang
Zhou, Taofei
Tian, Feifei
Xu, Yu
Zhang, Yumin
Wang, Mingyue
Wang, Jianfeng
Xu, Ke
JOURNAL OF CRYSTAL GROWTH, 2016, 436 : 76 - 81
[46] Current Status and Future Prospects of Ammonothermal Bulk GaN Growth
Hashimoto, Tadao
Letts, Edward
Hoff, Sierra
SENSORS AND MATERIALS, 2013, 25 (03) : 155 - 164
[47] High Quality, Low Cost Ammonothermal Bulk GaN Substrates
Ehrentraut, Dirk
Pakalapati, Rajeev T.
Kamber, Derrick S.
Jiang, Wenkan
Pocius, Douglas W.
Downey, Bradley C.
McLaurin, Melvin
D'Evelyn, Mark P.
JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
[48] Seeded growth of GaN by the basic ammonothermal method
Hashimoto, Tadao
Saito, Makoto
Fujito, Kenji
Wu, Feng
Speck, James S.
Nakamura, Shuji
JOURNAL OF CRYSTAL GROWTH, 2007, 305 (02) : 311 - 316
[49] Development of GaN wafers via the ammonothermal method
Letts, Edward
Hashimoto, Tadao
Hoff, Sierra
Key, Daryl
Male, Keith
Michaels, Mathew
JOURNAL OF CRYSTAL GROWTH, 2014, 403 : 3 - 6
[50] Photoluminescence from (0001) GaN grown by the acidic ammonothermal technique
Fujii, Katsushi
Fujimoto, Gakuyo
Goto, Takenari
Yao, Takafumi
Kagamitani, Yuji
Hoshino, Naruhiro
Ehrentraut, Dirk
Fukuda, Tsuguo
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (05) : 896 - 899

← 1 2 3 4 5 →