High efficiency solar cell based on Cu(In,Ga)S2 thin film grown by 3-stage process

被引：0

作者：

Barreau, Nicolas ^{[1
]}

Thomere, Angelica ^{[1
]}

Cammilleri, Davide ^{[2
]}

Crossay, Alexandre ^{[2
]}

Guillot-Deudon, Catherine ^{[1
]}

Lafond, Alain ^{[1
]}

Stephant, Nicolas ^{[1
]}

Lincot, Daniel ^{[2
]}

Caldes, M. Teresa ^{[1
]}

Bodeux, Romain ^{[3
]}

Berenguier, Baptiste ^{[2
]}

机构：

[1] Univ Nantes, CNRS, Inst Mat Jean Rouxel, IMN, Nantes, France

[2] Inst Photovolta Ile France IPVF, Palaiseau, France

[3] EDF R&D, Palaiseau, France

来源：

2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2020年

关键词：

Cu(In; Ga)S-2; thin film; co-evaporation; high efficiency solar cell;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We investigate the structural, morphological and optoelectronic properties of Cu(In,Ga)S-2 thin films synthesized following the 3-stage process. The optoelectronic characteristics of the layers are observed drastically improved when the highest processing temperature is increased up to 600 degrees C. Surprisingly, these latter films are not those yielding the highest cells efficiency, probably because of non-optimized buffer/absorber interface. The best performance we have achieved within the frame of this study is 14.2 % for a bandgap of 1.65 eV, which is among the best results ever reached with these polycrystalline structures.

引用

页码：1715 / 1718

页数：4

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