Room-temperature operation of an InAs-GaAs-AlAs quantum-cascade laser

被引：17
|
作者：
Carder, DA [1 ]
Wilson, LR
Green, RP
Cockburn, JW
Hopkinson, M
Steer, MJ
Airey, R
Hill, G
机构：
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC 3 5, Semicond Cent Facil, Sheffield S1 3JD, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 20期
关键词：
D O I：
10.1063/1.1576908
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the shortest-wavelength (lambdasimilar to8.5 mum) room-temperature laser operation so far achieved for GaAs-based quantum-cascade (QC) lasers. By depositing InAs monolayers in the device active regions during growth, we are able to both reduce the emission wavelength and minimize thermally activated carrier leakage into quasicontinuum states. This approach results in laser operation up to 305 K, with a peak optical power of similar to10 mW at room temperature. A reduced temperature sensitivity of the threshold current compared with similar GaAs-Al0.45Ga0.55As QC lasers is also observed. (C) 2003 American Institute of Physics.
引用
收藏
页码：3409 / 3411
页数：3
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